{"id":257,"date":"2025-10-09T12:54:37","date_gmt":"2025-10-09T03:54:37","guid":{"rendered":"https:\/\/pr.eng.hokudai.ac.jp\/rc\/en\/?post_type=featured_post&#038;p=257"},"modified":"2026-03-30T18:07:45","modified_gmt":"2026-03-30T09:07:45","slug":"202510fp002","status":"publish","type":"featured_post","link":"https:\/\/pr.eng.hokudai.ac.jp\/rc\/en\/featured\/202510fp002\/","title":{"rendered":"Research and Development of Core Technologies for Next-Generation Semiconductor Microfabrication"},"content":{"rendered":"\n<h2 class=\"wp-block-heading has-largest-font-size\">A new project is underway to develop innovative semiconductor microfabrication technology \u201cMade in Japan\u201d<\/h2>\n\n\n\n<figure class=\"wp-block-image aligncenter size-large is-resized\"><img loading=\"lazy\" decoding=\"async\" width=\"1600\" height=\"1069\" src=\"https:\/\/pr.eng.hokudai.ac.jp\/rc\/en\/wp-content\/uploads\/sites\/2\/2025\/10\/kt_20251001_img02-1600x1069.jpg\" alt=\"\" class=\"wp-image-234\" style=\"width:750px\" srcset=\"https:\/\/pr.eng.hokudai.ac.jp\/rc\/en\/wp-content\/uploads\/sites\/2\/2025\/10\/kt_20251001_img02-1600x1069.jpg 1600w, https:\/\/pr.eng.hokudai.ac.jp\/rc\/en\/wp-content\/uploads\/sites\/2\/2025\/10\/kt_20251001_img02-800x535.jpg 800w, https:\/\/pr.eng.hokudai.ac.jp\/rc\/en\/wp-content\/uploads\/sites\/2\/2025\/10\/kt_20251001_img02-768x513.jpg 768w, https:\/\/pr.eng.hokudai.ac.jp\/rc\/en\/wp-content\/uploads\/sites\/2\/2025\/10\/kt_20251001_img02-1536x1027.jpg 1536w, https:\/\/pr.eng.hokudai.ac.jp\/rc\/en\/wp-content\/uploads\/sites\/2\/2025\/10\/kt_20251001_img02.jpg 2047w\" sizes=\"auto, (max-width: 1600px) 100vw, 1600px\" \/><\/figure>\n\n\n\n<p>Semiconductors are often referred to in Japan as the \u201crice of industry,\u201d a fundamental technology that supports modern society. Research and development into semiconductors is progressing on a global scale. Since 2024, Japan\u2019s semiconductor industry has been undergoing a major revitalization, beginning with the opening of TSMC\u2019s Kumamoto plant and the growth of semiconductor-related companies across Kyushu. In April 2025, Rapidus\u2019s Institute for Materials Research and Development (IIM) in Chitose City, Hokkaido, launched a pilot line for next-generation 2-nanometer chips.<\/p>\n\n\n\n<p>To ensure Japan remains competitive in the long run through research and development, the Cabinet Office initiated the Economic Security Key Technology Development Program (known as the K Program). A five-year project, \u201cNext-generation semiconductor microfabrication process technology\u201d, started in fiscal 2025 is one of its key initiatives.<\/p>\n\n\n\n<p>Extreme ultraviolet (EUV) lithography is the most advanced exposure technology for semiconductor miniaturization and a key driver of innovation across multiple industries. Despite its potential, commercialization faces formidable barriers: EUV lithography systems require immense electrical power and carry price tags in the hundreds of billions of yen. The technology has already been adopted by Rapidus in Japan, yet so far only a single company in the world, the Netherlands-based multinational ASML, has succeeded in fully commercializing EUV lithography systems.<\/p>\n\n\n\n<p>Semiconductor microfabrication project brought together Japanese institutions and experts with cutting-edge capabilities in EUV lithography, led by National Research and Development Agency RIKEN (Wako, Saitama Prefecture) to develop and disseminate foundational technologies capable of overcoming the major obstacles that EUV lithography still faces.<\/p>\n\n\n\n<p>Associate Professor Kentaro Tomita is one of the project members and is expected to play a key role in advancing the understanding and control of plasmas for EUV light sources through precision measurements. Because of the properties of the multilayer mirrors used in lithography, the usable wavelength for EUV light is limited to around 13.5 nm. To generate this light, plasma is produced by heating tin (Sn) to approximately 300,000 degrees Celsius.<br>Controlling plasma temperature and density, optimizing the metal ion (valence) state, and preventing excessive EUV light absorption by the plasma itself (self-absorption) are key to achieving high-efficiency EUV light output. However, plasmas are notoriously difficult to control: they are short-lived (less than 100 nanoseconds), extremely small (about 0.5 mm in diameter), unstable, and non-uniform, while also exhibiting complex flows at speeds of tens of thousands of meters per second. Measuring their internal temperature and density has long been considered impossible.<br>Dr. Tomita has developed a unique laser-scattering technology capable of measuring plasma electron temperature, density, and flow fields in EUV light sources. His work is opening new frontiers in the optimization of EUV light sources.<\/p>\n\n\n\n<figure class=\"wp-block-image aligncenter size-large is-resized\"><img loading=\"lazy\" decoding=\"async\" width=\"1600\" height=\"1069\" src=\"https:\/\/pr.eng.hokudai.ac.jp\/rc\/en\/wp-content\/uploads\/sites\/2\/2025\/10\/kt_20251001_img04-1600x1069.jpg\" alt=\"\" class=\"wp-image-236\" style=\"width:750px\" srcset=\"https:\/\/pr.eng.hokudai.ac.jp\/rc\/en\/wp-content\/uploads\/sites\/2\/2025\/10\/kt_20251001_img04-1600x1069.jpg 1600w, https:\/\/pr.eng.hokudai.ac.jp\/rc\/en\/wp-content\/uploads\/sites\/2\/2025\/10\/kt_20251001_img04-800x534.jpg 800w, https:\/\/pr.eng.hokudai.ac.jp\/rc\/en\/wp-content\/uploads\/sites\/2\/2025\/10\/kt_20251001_img04-768x513.jpg 768w, https:\/\/pr.eng.hokudai.ac.jp\/rc\/en\/wp-content\/uploads\/sites\/2\/2025\/10\/kt_20251001_img04-1536x1026.jpg 1536w, https:\/\/pr.eng.hokudai.ac.jp\/rc\/en\/wp-content\/uploads\/sites\/2\/2025\/10\/kt_20251001_img04.jpg 2048w\" sizes=\"auto, (max-width: 1600px) 100vw, 1600px\" \/><figcaption class=\"wp-element-caption\">Adjustment of custom-made spectrometer system for measurement of the temperature and density of plasma for EUV light sources.<\/figcaption><\/figure>\n\n\n\n<h2 class=\"wp-block-heading\">Pursuing innovation through cross-disciplinary collaboration<\/h2>\n\n\n\n<p>The advancement of EUV lithography brings together many underlying technologies. For example, the carbon dioxide lasers currently used for plasma generation in EUV lithography operate at a wavelength of 10.6 \u03bcm and suffer from extremely low plug-in efficiency (the conversion of electrical power into laser light). Developing new lasers with higher efficiency is just as important for the project as improving the efficiency of converting laser light into EUV light. Yet these challenges are typically tackled in separate research fields, and the conditions considered optimal in one are not always compatible with the other. This project therefore places strong emphasis on collaboration among specialists from diverse disciplines, united by a shared technological goal.<br>The project also includes other cross-disciplinary efforts, such as research on EUV-reflective mirrors and downstream microfabrication processes. As Professor Tomita notes, \u201cBy bringing together Japan\u2019s leading experts across multiple fields, we have the chance to generate and share with the world truly innovative technologies.\u201d<\/p>\n\n\n\n<figure class=\"wp-block-image aligncenter size-large is-resized\"><img loading=\"lazy\" decoding=\"async\" width=\"1600\" height=\"1069\" src=\"https:\/\/pr.eng.hokudai.ac.jp\/rc\/en\/wp-content\/uploads\/sites\/2\/2025\/10\/kt_20251001_img03-1600x1069.jpg\" alt=\"\" class=\"wp-image-235\" style=\"width:750px\" srcset=\"https:\/\/pr.eng.hokudai.ac.jp\/rc\/en\/wp-content\/uploads\/sites\/2\/2025\/10\/kt_20251001_img03-1600x1069.jpg 1600w, https:\/\/pr.eng.hokudai.ac.jp\/rc\/en\/wp-content\/uploads\/sites\/2\/2025\/10\/kt_20251001_img03-800x535.jpg 800w, https:\/\/pr.eng.hokudai.ac.jp\/rc\/en\/wp-content\/uploads\/sites\/2\/2025\/10\/kt_20251001_img03-768x513.jpg 768w, https:\/\/pr.eng.hokudai.ac.jp\/rc\/en\/wp-content\/uploads\/sites\/2\/2025\/10\/kt_20251001_img03-1536x1027.jpg 1536w, https:\/\/pr.eng.hokudai.ac.jp\/rc\/en\/wp-content\/uploads\/sites\/2\/2025\/10\/kt_20251001_img03.jpg 2047w\" sizes=\"auto, (max-width: 1600px) 100vw, 1600px\" \/><figcaption class=\"wp-element-caption\">Delay time generation devices for adjusting the timing of plasma generation and measurement. Temporal evolutions of temperature and density structures inside EUV light source plasmas are revealed wiht time resolutions below one hundred-millionth of a second.<\/figcaption><\/figure>\n\n\n\n<h2 class=\"wp-block-heading\">From fundamental science to industrial applications through measurement technologies<\/h2>\n\n\n\n<p>The K Program\u2019s \u201cNext-generation semiconductor microfabrication process technology\u201d project is being carried out under an all-Japan semiconductor framework led by RIKEN. \u201cThis is my first time participating in a project of this scale, both in terms of personnel and budget. I am very excited about the opportunity to collaborate with researchers from different fields,\u201d says Professor Tomita. He also emphasizes, \u201cMeasurement technologies play a crucial role in converting fundamental scientific knowledge of plasmas into applications that benefit industry and society.\u201d<br>To promote the development of semiconductor talent, Hokkaido University established the Semiconductor Frontier Education and Research Center in April 2025. Through Professor Tomita\u2019s involvement, the university\u2019s younger researchers will gain invaluable opportunities to learn from the project. With the expectation that \u201cfast-paced research on a five-year horizon is exactly where young talent should shine,\u201d the project is now taking its first steps toward shaping a new era.<\/p>\n\n\n\n<p class=\"has-x-small-font-size\">\uff0aThis work is supported by JST K Program Grant Number JPMJKP24M1, Japan.<\/p>\n\n\n\n<hr class=\"wp-block-separator has-alpha-channel-opacity is-style-wide\"\/>\n\n\n\n<div class=\"wp-block-group is-content-justification-right is-nowrap is-layout-flex wp-container-core-group-is-layout-17124a9a wp-block-group-is-layout-flex\">\n<div class=\"wp-block-media-text has-media-on-the-right is-style-media-text-profile has-theme-lightgray-background-color has-background\" style=\"padding-top:1rem;padding-right:1rem;padding-bottom:1rem;padding-left:1rem;grid-template-columns:auto 25%\"><div class=\"wp-block-media-text__content\">\n<p class=\"has-large-font-size\"><small>Faculty of Engineering, Division of <br>Applied Quantum Science and Engineering<\/small><br>Associate Professor <a href=\"https:\/\/researchmap.jp\/tomita_kentaro\" target=\"_blank\" rel=\"noreferrer noopener\">Kentaro Tomita<\/a><\/p>\n<\/div><figure class=\"wp-block-media-text__media\"><img loading=\"lazy\" decoding=\"async\" width=\"800\" height=\"800\" src=\"https:\/\/pr.eng.hokudai.ac.jp\/rc\/en\/wp-content\/uploads\/sites\/2\/2025\/10\/202510fp002-portrait.jpg\" alt=\"\" class=\"wp-image-355 size-thumbnail\" srcset=\"https:\/\/pr.eng.hokudai.ac.jp\/rc\/en\/wp-content\/uploads\/sites\/2\/2025\/10\/202510fp002-portrait.jpg 800w, https:\/\/pr.eng.hokudai.ac.jp\/rc\/en\/wp-content\/uploads\/sites\/2\/2025\/10\/202510fp002-portrait-400x400.jpg 400w, https:\/\/pr.eng.hokudai.ac.jp\/rc\/en\/wp-content\/uploads\/sites\/2\/2025\/10\/202510fp002-portrait-768x768.jpg 768w\" sizes=\"auto, (max-width: 800px) 100vw, 800px\" \/><\/figure><\/div>\n<\/div>\n","protected":false},"excerpt":{"rendered":"<p>In April 2025, an R&#038;D project for innovative fundamental technologies considered essential for the further development of next-generation semiconductor technologies has been launched, bringing together institutions and human resources with cutting-edge technologies related to EUV lithography (the overall principal investigator is Katsumi Midorikawa, special advisor to RIKEN). The research topics will mainly be the development of new lasers, mirrors for EUV, and laser microfabrication technology for back-end processing. In this project, Tomita will be responsible for the development of measurement and optimization techniques for the plasma for EUV light sources generated by the laser.<\/p>\n","protected":false},"featured_media":233,"template":"","meta":{"_acf_changed":false,"inline_featured_image":false},"tags":[344,340,341,342,343],"content_type":[6],"content_issue":[261],"content_field":[264],"content_year":[347],"class_list":["post-257","featured_post","type-featured_post","status-publish","has-post-thumbnail","hentry","tag-electron-temperature","tag-laser-produced-plasma","tag-euv-lithography","tag-plasma-diagnostics","tag-laser-thomson-scattering","content_type-projects","content_issue-vol0001-2025","content_field-264","content_year-347"],"acf":[],"_links":{"self":[{"href":"https:\/\/pr.eng.hokudai.ac.jp\/rc\/en\/wp-json\/wp\/v2\/featured_post\/257","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/pr.eng.hokudai.ac.jp\/rc\/en\/wp-json\/wp\/v2\/featured_post"}],"about":[{"href":"https:\/\/pr.eng.hokudai.ac.jp\/rc\/en\/wp-json\/wp\/v2\/types\/featured_post"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/pr.eng.hokudai.ac.jp\/rc\/en\/wp-json\/wp\/v2\/media\/233"}],"wp:attachment":[{"href":"https:\/\/pr.eng.hokudai.ac.jp\/rc\/en\/wp-json\/wp\/v2\/media?parent=257"}],"wp:term":[{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/pr.eng.hokudai.ac.jp\/rc\/en\/wp-json\/wp\/v2\/tags?post=257"},{"taxonomy":"content_type","embeddable":true,"href":"https:\/\/pr.eng.hokudai.ac.jp\/rc\/en\/wp-json\/wp\/v2\/content_type?post=257"},{"taxonomy":"content_issue","embeddable":true,"href":"https:\/\/pr.eng.hokudai.ac.jp\/rc\/en\/wp-json\/wp\/v2\/content_issue?post=257"},{"taxonomy":"content_field","embeddable":true,"href":"https:\/\/pr.eng.hokudai.ac.jp\/rc\/en\/wp-json\/wp\/v2\/content_field?post=257"},{"taxonomy":"content_year","embeddable":true,"href":"https:\/\/pr.eng.hokudai.ac.jp\/rc\/en\/wp-json\/wp\/v2\/content_year?post=257"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}